2SD960 - Silicon NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 3A Complement to Type 2SB868 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power swit

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2SD960 silicon npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD960
Manufacturer	Inchange Semiconductor
File Size	214.21 KB
Description	Silicon NPN Transistor
Datasheet	2SD960 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 3A ·Complement to Type 2SB868 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD960 isc website：www.iscsemi.