2SD961 - Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A Complement to Type 2SB869 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

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2SD961 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD961
Manufacturer	Inchange Semiconductor
File Size	214.52 KB
Description	Power Transistor
Datasheet	2SD961 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·Complement to Type 2SB869 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD961 isc website：www.iscsemi.