2SD961
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Good Linearity of h FE
- Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A
- plement to Type 2SB869
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD961 isc website：.iscsemi....
