q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the
low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 40 20 7 8 5 0.75 150.
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Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the
low-voltage power supply.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 40 20 7 8 5 0.75 150
–55 ~ +150
Unit V V V A A W ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.
2SD965 Datasheet
