Panasonic 2SD965
Silicon NPN Transistor
FEATURES
q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. sABSOLUTE MAXIMUM RATINGS
(Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 20 7 8 5 0.75 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A sELECTRICAL CHARACTERISTICS
(Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB =...