2SD966
Features
0.45- 0.1 1.27
+0.2 s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO IEBO VCEO VEBO h FE1 h FE2 VCE(sat) f T Cob
- 1
Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1m A, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A- 2 VCE = 2V, IC = 2A- 2 IC = 3A, IB = 0.1A- 2 VCB = 6V, IE =
- 50m A, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min
1:Emitter 2:Collector 3:Base EIAJ:SC- 51 TO- 92L Package typ max 0.1 0.1
Unit µA µA V V
20 7 230 150 1 150 50
- 2
V MHz p F
Pulse measurement
- 1h
FE1
Rank classification
Q 230 ~ 380 R 340 ~ 600
Rank h FE1
Transistor
- Ta
1.2 2.4 Ta=25˚C IB=7m A 6m A 1.6 5m A 1.2 4m A 3m A 0.8 2m A 0.4
- VCE
6 VCE=2V 5 25˚C
- VBE
Collector power dissipation PC (W)
Collector current IC...
