2SD966 - Silicon NPN epitaxial planer type Transistor
Panasonic
Key Features
0.45.
0.1 1.27
+0.2
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob.
1
Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A.
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Transistor
2SD966
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.9± 0.2
Unit: mm
4.9± 0.2
q q
2.54± 0.15
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.45–0.1 1.27
+0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.5± 0.5
s Absolute Maximum Ratings
0.7–0.2
+0.3
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
0.7± 0.1
8.6± 0.2
s Features
0.45–0.1 1.27
+0.
2SD966 Datasheet
