Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with
the low-voltage power supply. SOT-89
4.50±0.1 1.80±0.1
123
0.48±0.1
0.53±0.1
2.50±0.1 4.00±0.1
Unit:mm 1.50 ±0.1
0.44±0.1
0.80±0.1 2.60±0.1
0.40±0.1.
Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCB.
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SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistors
2SD965-Q
■ Features
● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with
the low-voltage power supply.
SOT-89
4.50±0.1 1.80±0.1
123
0.48±0.1
0.53±0.1
2.50±0.1 4.00±0.1
Unit:mm 1.50 ±0.1
0.44±0.1
0.80±0.1 2.60±0.1
0.40±0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
3.00±0.1
Rating 40 20 5 5 0.5 150
-55 to +150
Unit V V V A W ℃ ℃
1.Base 2.Collector 3.
2SD965-Q Datasheet
