Datasheet4U Logo Datasheet4U.com

2SD965 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.

Key Features

  • q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 40 20 7 8 5 0.75 150.
  • 55 ~ +150 Unit V V V A A W ˚C ˚C 2.54±0.15 1 2 3 0.45.
  • 0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
GME Logo 2SD965 LOW VOLTAGE HIGH CURRENT TRANSISTOR GME
UTC Logo 2SD965 Transistor UTC
Panasonic Logo 2SD965 Silicon NPN Transistor Panasonic
Dc Components Logo 2SD965 NPN Transistor Dc Components
SEMTECH Logo 2SD965 NPN Silicon Transistor SEMTECH

More Datasheets from Panasonic

Part Number Description
2SD966 Silicon NPN epitaxial planer type Transistor
2SD966 Silicon NPN Transistor
2SD968 Silicon PNP epitaxial planer type Transistor
2SD968A Silicon NPN Transistor
2SD969 Silicon PNP epitaxial planer type Transistor
2SD946 Si NPN Epitaxial Planar Transistor
2SD946 Silicon NPN Transistor
2SD946A Si NPN Epitaxial Planar Transistor
2SD946A Silicon NPN Transistor
2SD946B Silicon NPN Transistor

2SD965 Distributor