Jiangsu 2SD965A
Transistor
| Part No. | 2SD965A |
|---|---|
| Datasheet | 2SD965A Download |
| Manufacturer |  Jiangsu |
| Description | Transistor |
| Buy | Stock & Price |
FEATURES
z Audio amplifier z Flash unit of camera z Switching circuitMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 2. COLLECTOR 1 3. EMITTER 2 3 Value 40 30 7 5 750 150 -55-150 Units V V V A mW ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE’(2) hFE(3) Collector-emitter saturation voltage Transition frequency Out capacitance VCE(sat) fT Cob Test conditions MIN 40 30 7 0.1 0.1 200 230 150 1 150 50 V MHz pF 800 TYP MAX UNIT V V V μA μA IC=0.1mA, IE=0 IC= 1mA. IB=0 IE= 10μA, IC=0 VCB= 10V,IE=0 VEB=7V, IC=0 VCE= 2 V, IC=1mA VCE=...