Datasheet Details
| Part number | 2SK1018 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.41 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK1018 Datasheet
|
|
|
| Part number | 2SK1018 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.41 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK1018 Datasheet
|
|
|
|
·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK1018 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK1018 | POWER MOSFET | Fuji Electric |
| Part Number | Description |
|---|---|
| 2SK1010 | N-Channel MOSFET Transistor |
| 2SK1011 | N-Channel MOSFET Transistor |
| 2SK1012 | N-Channel MOSFET Transistor |
| 2SK1013 | N-Channel MOSFET Transistor |
| 2SK1014 | N-Channel MOSFET Transistor |
| 2SK1015 | N-Channel MOSFET Transistor |
| 2SK1016 | N-Channel MOSFET Transistor |
| 2SK1017 | N-Channel MOSFET Transistor |
| 2SK1019 | N-Channel MOSFET Transistor |
| 2SK1007 | N-Channel MOSFET Transistor |