| Part number | 2SK1082 |
|---|---|
| Datasheet | 2SK1082-InchangeSemiconductor.pdf |
| File Size | 203.81 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
|
|
·Drain Current ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max....
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SK1082 | N-Channel Silicon Power MOS-FET | Fuji Electric |
|
2SK1082-01 | N-Channel Silicon Power MOS-FET | Fuji Electric |
See all Inchange Semiconductor datasheets
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