Datasheet Details
| Part number | 2SK1356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1356-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1356-InchangeSemiconductor.pdf |
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·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK1356 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1356 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1356 | N-Channel MOSFET | Toshiba |
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