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2SK1358 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 9A@ TC=25℃ Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high current DC-DC conver

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high current DC-DC converter, Relay Drive adn Moto Drives Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A IDP Drain Current-Single Plused 27 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.