Datasheet Details
| Part number | 2SK1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.49 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1941-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.49 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1941-InchangeSemiconductor.pdf |
|
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·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W 2SK1941 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1941 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance tr Rise time ton Turn-on time tf Fall time toff Turn-off time CONDITIONS VGS= 0;
ID=1mA VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1941-01R | N-channel MOS-FET | Fuji Electric |
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