Datasheet Details
| Part number | 2SK1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.27 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1942-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1942 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.27 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 2SK1942-InchangeSemiconductor.pdf |
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·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W 2SK1942 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1942 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA 900 V VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1942-01 | N-channel MOS-FET | Fuji Electric |
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2SK1942-01 | N-Channel MOSFET | INCHANGE |
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