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2SK382 - N-Channel MOSFET Transistor

General Description

Drain Current ID=2A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS

High speed switching.

High Cutoff frequency.

No secondary breakdown.

Suitable for switching regulator，DC-DC converter, RF amplifiers，and ultrasonic power

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK382 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·High speed switching. ·High Cutoff frequency. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC converter, RF amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 2 A Total Dissipation@TC=25℃ 30 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.