Datasheet Summary
2SK3869
..
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
Unit: mm
- Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.)
- High forward transfer admittance: |Yfs| = 5.5 S (typ.)
- Low leakage current: IDSS = 100 μA (VDS = 450 V)
- Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...