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K3869 - 2SK3869

Key Features

  • nintended U.

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2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.