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2SK617 - N-Channel MOSFET Transistor

Datasheet Summary

Description

applications such as switching regulators, converters, solenoid and relay drivers.

Features

  • Drain Current.
  • ID=1A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 800V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number 2SK617
Manufacturer Inchange Semiconductor
File Size 235.00 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK617 Datasheet
Additional preview pages of the 2SK617 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max.
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