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2SK610 - N-Channel MOSFET Transistor

General Description

High Voltage.

High speed power switching.

Max.

Key Features

  • Drain Current.
  • ID=3A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 400V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·High Voltage. ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 3 A 80 W 150 ℃ -55~150 ℃ 2SK610 isc website：www.iscsemi.