2SK610
Description
High speed power switching.
Key Features
- Drain Current -ID=3A@ TC=25℃
- Drain Source Voltage- : VDSS= 400V(Min)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Part: 2SK610
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 241.03 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK611 | NEC | MOS FIELD EFFECT POWER TRANSISTOR |
| 2SK614 | Panasonic | Silicon N-Channel MOSFET |
| 2SK612 | Unknown Manufacturer | MOS Field Effect Power Transistors |
| 2SK612-Z | Unknown Manufacturer | MOS Field Effect Power Transistors |
| K612 | NEC | 2SK612 |
| 2SK613 | Sony Semiconductor Solutions | Silicon N-Channel Junction FET |