Datasheet4U Logo Datasheet4U.com

2SK614 - Silicon N-Channel MOSFET

This page provides the datasheet information for the 2SK614, a member of the 2SK0614 Silicon N-Channel MOSFET family.

Datasheet Summary

Features

  • 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150.
  • 55 to +150 Unit V V A A mW °C °C 0.45+0.15.
  • 0.1 2.5+0.6.
  • 0.2 1 2 3.

📥 Download Datasheet

Datasheet preview – 2SK614

Datasheet Details

Part number 2SK614
Manufacturer Panasonic Semiconductor
File Size 74.15 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK614 Datasheet
Additional preview pages of the 2SK614 datasheet.

📁 Similar Datasheet

  • 2SK61 - Silicon N-Channel Junction FET (ETC)
  • 2SK610 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK611 - MOS FIELD EFFECT POWER TRANSISTOR (NEC)
  • 2SK612 - MOS Field Effect Power Transistors (NEC)
  • 2SK612 - MOS Field Effect Power Transistors (ETC)
  • 2SK612-Z - MOS Field Effect Power Transistors (NEC)
  • 2SK612-Z - MOS Field Effect Power Transistors (ETC)
  • 2SK613 - Silicon N-Channel Junction FET (Sony)
  • 2SK616 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK617 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Panasonic Semiconductor
  • 2SK614 - N-Channel MOSFET
  • 2SK615 - N-Channel MOSFET
  • 2SK601 - N-Channel MOSFET
  • 2SK620 - N-Channel MOSFET
  • 2SK65 - Silicon N-Channel Junction FET
  • 2SK655 - Silicon N-Channel MOSFET
  • 2SK656 - Silicon N-Channel MOSFET
  • 2SK657 - Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.
Published: |