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2SK614 - Silicon N-Channel MOSFET

Download the 2SK614 datasheet PDF. This datasheet also covers the 2SK0614 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150.
  • 55 to +150 Unit V V A A mW °C °C 0.45+0.15.
  • 0.1 2.5+0.6.
  • 0.2 1 2 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK0614_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK614
Manufacturer Panasonic
File Size 74.15 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK614 Datasheet

📁 Similar Datasheet

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2SK612 MOS Field Effect Power Transistors NEC
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Other Datasheets by Panasonic

Part Number Description
2SK614 N-Channel MOSFET
2SK615 N-Channel MOSFET
2SK601 N-Channel MOSFET
2SK620 N-Channel MOSFET
2SK65 Silicon N-Channel Junction FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.