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Silicon MOS FETs (Small Signal)
2SK615
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance q High-speed switching q Allowing to be driven directly by CMOS and TTL q M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.5
0.4
6.9±0.1 1.5 R0.9 R0.9
2.4±0.2 2.0±0.2 3.5±0.1
2.5±0.1 1.0
1.0
1.0±0.1
R
0. 7
0.85
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
0.55±0.1
0.45±0.05
1.25±0.05
Symbol VDS VGSO ID IDP PD
*
Ratings 80 20 ±0.5 ±1 1 150 −55 to +150
Unit V V A A W °C °C
2.5 2.
2SK615 Datasheet
