2SK805 Overview
Description
Drain Current –ID=20A@ TC=25℃ - Drain Source Voltage- : VDSS=200V(Min) - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SK805 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 197.11 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK805 | Matsushita Electric | Silicon N-Channel Power F-MOS FET |
| 2SK806 | Panasonic | Silicon N-channel Power F-MOS FET |
| 2SK808A | Inchange Semiconductor | N-Channel MOSFET |
| 2SK808 | Panasonic | Silicon N Channel Power FMOS FET |
| 2SK809 | Panasonic | Silicon N-channel Power F-MOS FET |