Datasheet Summary
isc N-Channel MOSFET Transistor
DESCRIPTION
- Drain Current
- ID=1A@ TC=25℃
- Drain Source Voltage-
: VDSS=900V(Min)
- Fast Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay...
