Part Number	2SK808A Datasheet
Manufacturer	Inchange Semiconductor
Overview	·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed . 5℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 0.7A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS.