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2SK895 Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor 2SK895.

General Description

·motor drive, DC-DC converter, power switch and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 125 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc website：.iscsemi.

Key Features

  • Drain Current : ID= 12A@ TC=25℃.
  • Drain Source Voltage : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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2SK895 Distributor