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2SK897 - N-Channel MOSFET Transistor

This page provides the datasheet information for the 2SK897, a member of the 2SK897-MR N-Channel MOSFET Transistor family.

Datasheet Summary

Description

and solenoid drive.

Features

  • Drain Current : ID= 4.0A@ TC=25℃.
  • Drain Source Voltage : VDSS= 550V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – 2SK897

Datasheet Details

Part number 2SK897
Manufacturer Inchange Semiconductor
File Size 279.34 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK897 Datasheet
Additional preview pages of the 2SK897 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor 2SK897-MR FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 550 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 40 W TJ Max.
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