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2SK954 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=3A@ TC=25℃ Drain Source Voltage- : VDSS=800V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed especially for high voltage.

high speed power switching.

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Datasheet Details

Part number 2SK954
Manufacturer Inchange Semiconductor
File Size 202.51 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor 2SK954 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 80 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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