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isc N-Channel MOSFET Transistor
2SK956
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
9
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.