Datasheet4U Logo Datasheet4U.com

2SK958 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=2A@ TC=25℃ Drain Source Voltage- : VDSS=900V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed especially for high voltage.

high speed power switching.

📥 Download Datasheet

Datasheet preview – 2SK958

Datasheet Details

Part number 2SK958
Manufacturer Inchange Semiconductor
File Size 197.92 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK958 Datasheet
Additional preview pages of the 2SK958 datasheet.

📁 Similar Datasheet

  • 2SK950 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK951-MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK952 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK954 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK955 - Power MOS FET (Fuji Semiconductors)
  • 2SK956-01R - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK957 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK957-MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK900 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK901 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
Other Datasheets by Inchange Semiconductor
  • 2SK950 - N-Channel MOSFET Transistor
  • 2SK952 - N-Channel MOSFET Transistor
  • 2SK953 - N-Channel MOSFET Transistor
  • 2SK954 - N-Channel MOSFET Transistor
  • 2SK955 - N-Channel MOSFET Transistor
  • 2SK956 - N-Channel MOSFET Transistor
  • 2SK957 - N-Channel MOSFET Transistor
  • 2SK957-MR - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK958 isc website：www.iscsemi.
Published: |