Datasheet Details
| Part number | 2STD1665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2STD1665-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2STD1665.
| Part number | 2STD1665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2STD1665-InchangeSemiconductor.pdf |
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·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators ·High efficiency low voltage switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Peak Current PC Collector Power Dissipation 20 A 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 0.1A;
IB= 5mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 1.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2STD1665 | Low voltage fast-switching NPN power transistor | ST Microelectronics |
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2STD1665T4 | Low voltage fast-switching NPN power transistor | STMicroelectronics |
| Part Number | Description |
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