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2STD1665 - Silicon NPN Power Transistor

General Description

Low collector saturation voltage High current gain characteristics Fast-switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulators High efficiency low voltage switching A

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isc Silicon NPN Power Transistor 2STD1665 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators ·High efficiency low voltage switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Peak Current PC Collector Power Dissipation 20 A 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.