2STD1665T4 Description
The device is a low voltage NPN transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with "base island" layout. Internal schematic diagram C (TAB) (1) B E (3) Table.
2STD1665T4 Key Features
- Very low collector to emitter saturation voltage
- High current gain characteristic
- Fast-switching speed