30N05 Datasheet | Inchange Semiconductor

FEATURES - Drain Current ID= 30A@ TC=25℃ - Drain Source Voltage- : VDSS= 50V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) - Fast Switching - APPLICATIONS - Switching power supplies,converters,AC and DC motor controls - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 50 ±30 ID Drain Current-Continuous 30 A PD Total Dissipation @TC=25℃ 105 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification - ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 30A ;VGS= 0 VGS= 10V; ID= 15A VGS= ±30V;VDS= 0 VDS=50V; VGS= 0 MIN TYPE MAX UNIT 50 V 2.0 4.0 V 1.5 V 0.05 Ω ±100 n A 200 µA isc website：.iscsemi.cn...