3DA752 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Low VCE(sat) Small and slim package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V

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Datasheet Details

Part number	3DA752
Manufacturer	Inchange Semiconductor
File Size	284.51 KB
Description	Silicon NPN Power Transistor
Datasheet	3DA752 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.