Datasheet Details
| Part number | 3DA752 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 284.51 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA752-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752.
| Part number | 3DA752 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 284.51 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA752-InchangeSemiconductor.pdf |
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·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A;
IB= 200mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3DA752 | TO-251 Plastic-Encapsulated Transistors | TRANSYS Electronics Limited |
| Part Number | Description |
|---|---|
| 3DA76 | Silicon NPN Power Transistor |
| 3DA77 | Silicon NPN Power Transistor |
| 3DA882 | Silicon NPN Power Transistor |