3DD208 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage-.
3DD208 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Part Number | Description |
|---|---|
| 3DD207 | Silicon NPN Power Transistors |
| 3DD207I | Silicon NPN Power Transistor |
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD102 | Silicon NPN Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage-.