Datasheet Details
| Part number | 3DD208 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 3DD208 Datasheet
|
|
|
| Part number | 3DD208 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
3DD208 Datasheet
|
|
|
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage
📁 Similar Datasheet