3DD208
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
- DC Current Gain-
: h FE= 30~250(Min.)@IC= 0.5A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for switching regulator and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-55~150 ℃
3DD208 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
