Datasheet Summary
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 3A
APPLICATIONS
- Designed for auto amplifier...