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3DD207I - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS

Designed for auto amplifier application.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.