Datasheet Details
| Part number | 3DD207I |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 145.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD207I-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | 3DD207I |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 145.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD207I-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： .iscsemi.
isc & iscsemi is registered trademark 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD207i ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 3DD2073 | NPN Transistor | ETC |
| Part Number | Description |
|---|---|
| 3DD207 | Silicon NPN Power Transistors |
| 3DD208 | Silicon NPN Power Transistor |
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD102 | Silicon NPN Power Transistor |
| 3DD102A | Silicon NPN Power Transistor |
| 3DD102B | Silicon NPN Power Transistor |
| 3DD102C | Silicon NPN Power Transistor |
| 3DD15 | Silicon NPN Power Transistor |
| 3DD155 | Silicon NPN Power Transistor |