3DD207I Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application.
3DD207I Datasheet
| Part number | 3DD207I |
|---|---|
| Download | 3DD207I Datasheet (PDF) |
| File Size | 145.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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