3DD201 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 40~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD201 |
|---|---|
| Download | 3DD201 Datasheet (PDF) |
| File Size | 204.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon Power Transistor |
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| Part Number | Description |
|---|---|
| 3DD200 | Silicon Power Transistor |
| 3DD200D | NPN Transistor |
| 3DD202A | NPN Transistor |
| 3DD202B | NPN Transistor |
| 3DD209L | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 40~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.