Datasheet Details
| Part number | 3DD200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | Silicon Power Transistor |
| Datasheet | 3DD200_Inchange.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200.
| Part number | 3DD200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | Silicon Power Transistor |
| Datasheet | 3DD200_Inchange.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation@TC=75℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 3DD200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
| Part Number | Description |
|---|---|
| 3DD200D | NPN Transistor |
| 3DD201 | Silicon Power Transistor |
| 3DD202A | NPN Transistor |
| 3DD202B | NPN Transistor |
| 3DD209L | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |