3DD200
3DD200 is Silicon Power Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
- DC Current Gain-
: hFE= 30~120(Min.)@IC= 2A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for B&W TV horizontal output...
