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3DD200 - Silicon Power Transistor

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Part number 3DD200
Manufacturer Inchange
File Size 207.95 KB
Description Silicon Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) DC Current Gain- : hFE= 30~120(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe
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