3DD200 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
3DD200 Datasheet
| Part number | 3DD200 |
|---|---|
| Download | 3DD200 Datasheet (PDF) |
| File Size | 207.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon Power Transistor |
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