3DD209L Overview
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;.
3DD209L datasheet by Inchange Semiconductor.
| Part number | 3DD209L |
|---|---|
| Datasheet | 3DD209L-INCHANGE.pdf |
| File Size | 208.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
3DD209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Jilin Sino |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD200 | Silicon Power Transistor |
| 3DD200D | NPN Transistor |
| 3DD201 | Silicon Power Transistor |
| 3DD202A | NPN Transistor |
| 3DD202B | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |