3DD209L Description
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;.
3DD209L is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Jilin Sino |
3DD209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;.