The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation. APPLICATIONS ·Designed for high power audio ,disk head positioners and
other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
3DD200D Datasheet
