Datasheet4U Logo Datasheet4U.com

53N05 - N-Channel MOSFET Transistor

Description

Drain Current ID= 53A@ TC=25℃ Drain Source Voltage- : VDSS= 50V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Curr

📥 Download Datasheet

Datasheet preview – 53N05

Datasheet Details

Part number 53N05
Manufacturer Inchange Semiconductor
File Size 61.55 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 53N05 Datasheet
Additional preview pages of the 53N05 datasheet.

📁 Similar Datasheet

  • 53NA50 - STE53NA50 (ST Microelectronics)
  • 53NC50 - STE53NC50 (STMicroelectronics)
Other Datasheets by Inchange Semiconductor
  • 53N06 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N05 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 50 ±30 53 V V A ID(puls) Pulse Drain Current 212 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website：www.iscsemi.
Published: |