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53N06 - N-Channel MOSFET Transistor

Description

Drain Current ID= 53A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Curr

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Datasheet Details

Part number 53N06
Manufacturer Inchange Semiconductor
File Size 61.56 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 53 V V A ID(puls) Pulse Drain Current 212 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website：www.iscsemi.
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