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BD546A - Silicon PNP Power Transistor

Download the BD546A datasheet PDF. This datasheet also covers the BD546 variant, as both devices belong to the same silicon pnp power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= -15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C Complement to Type BD545/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Note: The manufacturer provides a single datasheet file (BD546-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD546 Silicon PNP Power Transistor
BD546B Silicon PNP Power Transistor
BD546C Silicon PNP Power Transistor
BD544 Silicon PNP Power Transistors
BD544A Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor BD546/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD546 -40 BD546A -60 VCBO Collector-Base Voltage V BD546B -80 BD546C -100 BD546 -40 VCEO Collector-Emitter Voltage BD546A -60 V BD546B -80 BD546C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @