Datasheet Details
| Part number | BD546B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.83 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD546B BD546 Datasheet (PDF) |
|
|
Overview: isc Silicon PNP Power Transistor BD546/A/B/C.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BD546B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.83 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD546B BD546 Datasheet (PDF) |
|
|
|
·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546;
-60V(Min)- BD546A -80V(Min)- BD546B;
-100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD546 -40 BD546A -60 VCBO Collector-Base Voltage V BD546B -80 BD546C -100 BD546 -40 VCEO Collector-Emitter Voltage BD546A -60 V BD546B -80 BD546C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD546 V(BR)CEO Collector-Emitter Breakdown Voltage BD546A BD546B BD546C VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage BD546 ICES Collector Cutoff Current BD546A BD546B BD546C ICEO Collector Cutoff Current BD546/A BD546B/C IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain Switching times ton Turn-on Time toff Turn-off Time CONDITIONS IC= -30mA ;IB=0 IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD546B | PNP SILICON POWER TRANSISTORS | Bourns Electronic Solutions |
|
BD546 | PNP SILICON POWER TRANSISTORS | Bourns Electronic Solutions |
 |
BD5460GUL | Analog Input Monaural Class-D Speaker Amplifier | Rohm |
|
BD5461GUL | Analog Input Monaural Class-D Speaker Amplifier | Rohm |
|
BD5466GUL | Analog Input Monaural Class-D Speaker Amplifier | Rohm |
| Part Number | Description |
|---|---|
| BD546 | Silicon PNP Power Transistor |
| BD546A | Silicon PNP Power Transistor |
| BD546C | Silicon PNP Power Transistor |
| BD544 | Silicon PNP Power Transistors |
| BD544A | Silicon PNP Power Transistors |
| BD544B | Silicon PNP Power Transistors |
| BD544C | Silicon PNP Power Transistors |
| BD550 | Silicon NPN Power Transistors |
| BD550B | Silicon NPN Power Transistors |