Datasheet Details
| Part number | BD912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.81 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | BD912_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BD912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.81 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | BD912_InchangeSemiconductor.pdf |
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·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type BD911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 IB Base Current -5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.38 ℃/W BD912 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD912 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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BD912 | Power Transistors | RECTRON |
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BD912 | PNP PLASTIC POWER TRANSISTOR | CDIL |
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BD912 | Power Linear/Switching | Comset Semiconductors |
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BD912 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-THOMSON |
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