Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
Complement to Type BD953
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier and switching applica
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isc Silicon PNP Power Transistor
BD954
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD953 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resi
BD954 Datasheet
