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BD956 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) DC Current Gain- : hFE= 40(Min)@ IC= -500mA Complement to Type BD955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applica

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,
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