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BD956F - Silicon PNP Power Transistor

Download the BD956F datasheet PDF (BD952F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon pnp power transistor.

Description

DC Current Gain- : hFE= 40(Min)@ IC= -500mA Complement to Type BD949F/951F/953F/955F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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Note: The manufacturer provides a single datasheet file (BD952F_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD950F -60 BD952F -80 VCBO Collector-Base Voltage V BD954F -100 BD956F -120 BD950F -60 BD952F -80 VCEO Collector-Emitter Voltage V BD954F -100 BD956F -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMA
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