BDX85B Overview
Description
High DC Current Gain- : hFE= 750(Min)@ IC= 3A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C - Complement to Type BDX86/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in power linear and switching applications. SYMBOL PARAMETER VALUE BDX85 45 BDX85A 60 VCBO Collector-Base Voltage BDX85B 80 BDX85C 100 BDX85 45 BDX85A 60 VCEO Collector-Emitter Voltage BDX85B 80 BDX85C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 100 PC Collector Power Dissipation @ TC=25℃ 100 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ SYMBOL PARAMETER Rth j-c MAX UNIT 1.75 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX85/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX85 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX85A BDX85B IC= 50mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICBO BDX85C Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base-Emitter Saturation Voltage IC= 4A; IB= 16mA IC= 8A; IB= 40mA IC= 8A; IB= 80mA Base-Emitter On Voltage BDX85 Collector Cutoff Current BDX85A BDX85B BDX85C BDX85 IC= 4A; VCE= 3V VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ VCE= 22V; IB= 0 ICEO Collector Cutoff Current BDX85A BDX85B VCE= 30V; IB= 0 VCE= 40V; IB= 0 BDX85C VCE= 50V; IB= 0 IEBO Emitter Cutoff Curren.
