Datasheet Details
| Part number | BU2532AW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU2532AW-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BU2532AW.
| Part number | BU2532AW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU2532AW-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector- Emitter Voltage(VBE= 0) 1500 VCEO Collector-Emitter Voltage 800 UNIT V V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 16 A ICM Collector Current-Peak 40 A IB Base Current- Continuous 10 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 125 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU2532AW | Silicon Diffused Power Transistor | NXP |
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BU2532AL | Silicon Diffused Power Transistor | NXP |
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BU2532AL | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BU2527AW | Silicon NPN Power Transistor |
| BU2527AX | Silicon NPN Power Transistor |
| BU2727DX | SILICON POWER TRANSISTOR |