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BU2532AW - Silicon Diffused Power Transistor

General Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.

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Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 7 1.4 MAX. 1500 800 16 40 125 5.0 1.8 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 7.0 A; IB = 1.17 A f = 82 kHz ICsat = 7.