Datasheet Details
| Part number | BUL128DB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 157.64 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL128DB-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BUL128DB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 157.64 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL128DB-InchangeSemiconductor.pdf |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms 8A IB Base Current-Continuous 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.78 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc &
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL128D | HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR | TGS |
 |
BUL128D-B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
|
BUL128 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
 |
BUL128 | NPN Transistor | INCHANGE |
|
BUL128FP | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
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