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BUL128DB - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A Very High Switching Speed APPLICATIONS

Designed for electronic ballasts for fluorescent lighting.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting.