BUL741
BUL741 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Breakdown Voltage
: V(BR)CEO = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 0.7A
APPLICATIONS
- Designed for electronic lamp ballast circuits switch-mode power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
400 V
VEBO Emitter-Base Voltage
15 V
IC Collector Current-Continuous
2.5 A
ICM Collector Current-peak
5A
IB Base Current-Continuous
1.5 A
IBM Base Current-peak
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
3 60 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.08 ℃/W isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise...
