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BUL741 - Silicon NPN Power Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS

power supplies applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 2.5 A ICM Collector Current-peak 5A IB Base Current-Continuous 1.