BUL741 Description
·Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications.
BUL741 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUL741 | High voltage fast-switching NPN Power Transistor |
STMicroelectronics |
BUL741FP | High voltage fast-switching NPN Power Transistor |
·Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications.